Institute of Applied Research

Institute of Applied Research

Sukurta: 11 September 2013

tmi

9 Saulėtekio, LT-10222 Vilnius
Tel./fax 236 6059
E-mail:
www http://www.tmi.vu.lt

Director – Prof. Habil. Dr. Saulius Antanas Juršėnas

STAFF

34 research fellows (24 holding research degree).

 

RESEARCH AREAS

Investigation of Novel Organic and Inorganic Functional Materials and Structures.
Development, Characterization, and Interdisciplinary Application of Advanced Electronic and Optoelectronic Devices.

DOCTORAL DISSERTATIONS MAINTAINED IN 2014

A. Tuzikas. Niche applications of solid-state lighting with controllable colour-rendition, spatial, photochemical, and photobiological properties.

MAIN SCIENTIFIC ACHIEVEMENTS IN 2014

Remarkable control improvement of In incorporation in InGaN/GaN MQW’s grown by MOCVD. First growth runs of BN.

The detection regimes, by combining the electrical and scintillation signals in wide-gap semiconducting materials such as GaN, CdS, ZnSe and synthetic diamond, have been developed for the in situ registration of hadron radiations, and approved for the analysis of cluster type radiation defects.

The invention, implementation, demonstration, and commercialization of a solid-state lighting engine for artwork-specific illumination with controlled photochemical safety.

Effective schemes of synthesis of several products were worked out: 3-Bromofluorenone, 4-tert-Butyl-6-phenylpyrimidine, Sodium 3-carbazolsulfonate, 3,5-Dibromo-p-terphenyl, 3 Methylphe-nyl-3-(9-phenyl-9H-fluoren-9-yl)phenylamine; these products are new in the market. New effective prescriptions were worked out for synthesis of several known products: 2,3,5-Triphenylpyrazi-ne, 3-Bromo-4-ethylphenol, N-(4-Bromophenyl)-2-amino-9,9-dihexylfluorene, 1,3-Butylene sulfate, (E)-2,4‘-Ethene-1,2-yl)dipyridine. A number of fluorene, benzofluorene, bifluorene derivatives was prepared for system search of their luminescent and other physical properties, seeking for new compo-nents for OLED applications.

DEPARTMENT OF ADVANCED TECHNOLOGIES

10 Saulėtekio, LT-10223 Vilnius
Tel. 236 6069
E-mail:

Head – Dr. Roland Tomašiūnas

DIVISION OF MATERIALS ENGINEERING

10 Saulėtekio, LT-10223 Vilnius
Tel.  +370 5 236 6099
E-mail:

Head – Dr. Vytautas Grivickas

STAFF

Chief research fellow: Dr. R. Tomašiūnas.
Senior researchers: Dr. V. Grivickas, Dr. A. Kadys, Dr. T. Malinauskas.
Researchers: Dr. V. Bikbajevas Dr. T. Grinys (all part-time).
Junior research fellows: E. Jelmakas, I. Reklaitis, K. Gulbinas, M. Skapas (all part -time)
Doctoral students: K. Gulbinas, I. Reklaitis, M. Skapas.
Senior engineer: G. Medeišienė (part-time).
Engineers: M. Dmukauskas (part-time).
Technicians: R. Beresnienė, J. Getautis (part time), E. Gurauskas (part time).

RESEARCH INTERESTS

GaN technology.
Optical nonlinearities of nano-structures (InGaAs, GaN).
Non-linear optical properties and mobility of organic molecules in polymers and at GaN surface.
Optical studies of carrier transport and recombination of silicon carbide and of layered semiconductors and their nanostructures.

RESEARCH PROJECTS CARRIED OUT IN 2014

Projects Supported by University Budget

Development of Materials, Structures and Devices for Topical Semiconductor Optoelectronics. Prof. Habil. Dr. K. Jarašiūnas, prof. Habil. Dr. S. A. Juršėnas, Dr. R. Tomašiūnas. 2011–2014.

GaN, InGaN, AlGaN multilayers and nanostructures were grown by MOCVD technology and investigated by microscopy (SEM), XRD, optical (spectroscopy, luminescence, non-linear optical methods) and electrical (mobility) techniques. InAs/InGaAs chirped quantum dot semiconductor optical amplifier (QD SOA) waveguide devices composed of three groups of quantum dots each dedicated to a ground state transition at wavelength 1285, 1243 and 1211 nm were investigated by femtosecond pump–probe technique applied for a waveguide configuration. From photoinduced transmission kinetics absorption recovery in the time range of picoseconds was considered. Band gap edge absorption and the photoluminescence in layered TlGaSe2 and TlInS2 semiconductors were investigated. The role of the structural inhomogeneity of layers and proper application of symmetry rules for optical transitions was defined. The invariance of surface structure was discovered.

National Research Projects

Research Council of Lithuania. Creation and Investigation of Azo Chromophore Functionalised GaN surfaces (AZOGAN) (No. MIP-078/2012). Dr. R. Tomašiūnas. 2012–2014.

To investigate the functionalization of GaN, carbazole based azodyes were synthesized having accordingly one and two 2,3-epoxypropil derivatives to be attached to GaN surface. Formation of self-assembled monolayers and their function (isomerization) at GaN surface was proven by Kelvin probe under resonant illumination. From the experimental results trans-cis-trans isomerization time constants for the azodyes at the GaN surface were extracted taking into account the photosensitive GaN surface potential barrier.

Main publications:

Arnatkevičiūtė, A., Reklaitis, I., Kadys, A.,Malinauskas, T., Stanionytė, S., Juška, G.,Rzheutski, M.V., Tomašiūnas, R. 2014. Relationships between strain and recombination in intermediate growth stages of GaN. J. Electron. Mater, vol. 43(7), 2667.

Bikbajevas, V., Kadys, A., Tomašiūnas, R., Pūras, R., Urnikaitė, S.,Getautis, V. 2014. Photoisomerization of azophenylcarbazole self-assembled monolayer on GaN studied by Kelvin probe. Mol. Cryst. Liq. Cryst., vol. 604(1), 52.

Lithuanian Government, Programm for cooperation research (Joint Research Programme). Development and Industrial Application of New Generation of Materials Processing Using Ultrafast Pulse Laser Sources. (VP1-3.1-ŠMM-10-V) (2013-2015), partner resp. Dr. R.Tomašiūnas. In cooperation with Vilnius University Laser Centre.

Light extraction efficiency enhancement at flip-side surface of sapphire patterned by using femtosecond laser pulse irradiation was investigated. The variation of patterning geometry provided by different gap and pit size, by triangle and square array configuration revealed compactness of the pit network as optimum condition for the enhancement. A new original method for LED chip separation and n-GaN layer exposure using femtosecond laser direct writing and 45◦ angle ablation geometry has been suggested and investigated.

Main publications:

Jelmakas, E., Alsys, M., Gečys, P.,Kadys, A.,Račiukaitis, G.,Margueron, S.,Tomašiūnas, R. 2014. GaN epitaxial lateral overgrowth on laser-textured sapphire. Phys. Status Solidi,A 211(12), 2848.

European Community’s social foundation under Grant Agreement. Development and Characterization of Perspective Materials for Semiconductor and Nanotechnology by cw and Ultrafast Spectrometry in a Wide Spectral Range (LaMeTech Mokslas) (VP1-3.1-ŠMM-08-K-01-004/KS-120000-1756), partner resp. Dr. T. Grinys. 2013–2015.

The project deals with GaN growth on Silicon with Rare-oxide interlayer. Two types of distributed Bragg reflector structures consisting of Gd2O3/Si and Er2O3/Si stacks were prepared on Si(111) substrates by Translucent Inc. for GaN growth. After the stability of the structures was determined, GaN has been grown in a three stage process procedure by the metalorganic chemical vapour deposition (MOCVD) method. The X-ray diffraction and transmission electron microscopy analysis have revealed a deposited crystalline GaN of wurtzite structure with a smooth surface.

Main publications:

Dargis, R., Clark, A., Arkun, F.E., Grinys, T., Tomasiunas, R., O’Hara, A., Demkov, A.A. 2014. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology. J. Vac. Sci. Technol., A 32, 041506.

International Research Projects

FP7. Nanostructured Efficient White LEDs Based on Short-period Superlattices and Quantum Dots (NEWLED). Dr. R. Tomašiūnas. 2012–2016.

InN and In-rich InGaN layers have been grown on GaN templates using pulsed metalorganic chemical vapor deposition (MOCVD) technique and compared with analogous layers grown by conventional MOCVD. Using pulsed growth InN showed fairly low background electron concentration and high electron mobility (644 cm2(Vs)-1). For In-rich InGaN layers (68% and 80%) the density of islands was similar to that in InN, while the diameter varied from 50 to 150 nm. Inhomogeneities of In and Ga distribution in the layers have been investigated.

Main publications:

Kadys, A., Malinauskas, T., Grinys, T., Dmukauskas, M., Mickevičius, J., Aleknavičius, J., Tomašiūnas, R., Selskis, R., Kondrotas, R., Stanionytė, S., Lugauer, H., Strassburg, M. 2014. Growth of InN and In-rich InGaN layers on GaN templates by pulsed metalorganic chemical vapor deposition. J. Electron. Mater., online.

Nordic Energy Research Program. High Efficiency Integrated Solar Energy Converter (HEISEC). Dr. T. Malinauskas. 2012–2014.

The study of photo-electrochemical performance of n-InxGa1-xN electrodes with x ranging between 0 and 1 revealed that pure n-GaN is the most efficient from the view point of photoelectrochemical generation of hydrogen under simulated 1 Sun illumination and zero external bias. It has been shown that photocurrent density increases with electron concentration and mobility of electrons in the GaN layers, whereas introduction of In to n-GaN, even at x as low as 0.1, leads to decreased rates of the anodic process and, consequently, lower photocurrent density.

Main publications:

Arnatkevičiūtė, A., Reklaitis, I., Kadys, A., Malinauskas, T., Stanionytė, S., Juška, G., Rzheutski, M.V, Tomašiūnas, R. 2014. Relationships between strain and recombination in intermediate growth stages of GaN. J. Electron. Mater, vol. 43(7), 2667.

Juodkazytė, J., Šebeka, B., Savickaja, I., Kadys, A., Jelmakas, E., Grinys, T., Juodkazis, S., Juodkazis, K., Malinauskas, T. 2014. InxGa1-xN performance as a band-gap-tunable photo-electrode in acidic and basic solutions. Solar Energy Mater. Solar Cells, vol. 130, 36.

Contractual Research

Scientific project Ultrafast Carrier Dynamics Measurements in 6H-SiC and Layered Semiconductors. Dr. V. Grivickas. 2013–2015.

Induced optical absorption, defect investigation, two-photon investigation in semiinsulating SiC.

Main publications:

Grivickas, V., Gulbinas, K., Gavryushin, V., Bikbajevas, V., Korolik, O. V., Mazanik, A. V., Fedotov, A. K. 2014. Room-temperature photoluminescence in quasi-2D TlGaSe2 and TlInS2 semiconductors. Phys. Status Solidi RRL, vol. 8, 639.

Gulbinas, K., Grivickas, V., Gavryushin, V. 2014. Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation. Appl. Phys. Lett., vol. 105, 242107.

MAIN R&D&I (RESEARCH, DEVELOPMENT AND INNOVATION) PARTNERS

Royal Institute of Technology (Sweden)
Lawrence Livermore Nacional Laboratory (USA)
Center for Physical Sciences and Technology (Lithuania)
Kaunas University of Technology (Lithuania)
Translucent Inc. (USA)

OTHER SCIENTIFIC ACTIVITIES

Dr. V. Grivickas

Dr. R. Tomašiūnas

  • member of the Technical Committee 73 Nanotechnologies of the Lithuanian Standards Board;
  • member of the Lithuanian Material Research Society (LtMRS);
  • member of management committee of COST MP1403 action.

Dr. V. Bikbajevas

  • member of the Lithuanian Material Research Society (LtMRS).

DIVISION OF INFORMATION TECHNOLOGIES

29 M.K.Čiurlionio, LT-03100 Vilnius
Tel. 265 1797, fax +370 5 233 5648
E-mail:

Head – Dr. Arūnas Samuilis

STAFF

Senior research fellow: Dr. A. Samuilis (part time).
Research fellow: Dr. A. Konstantinov (part-time).
Senior engineers: V. Dadurkevičius, D. Ralys, F. Ralienė, J. Vaičiulis (all part-time).

RESEARCH INTERESTS

Artificial intelligence in various Lithuanian language computer implementations: e.g. machine translation, search systems, intelligent dictionaries, text parsing and data mining
The development of the dictionary of contemporary Lithuanian

RESEARCH PROJECTS CARRIED OUT IN 2014

In 2014 the development of the English-Lithuanian-English and French-Lithuanian-French statistical machine translation systems was focused on achieving better translation quality by applying morphological analysis to publicly available bilingual corpora in order to refine them. The morphological analysis has been applied to both English and Lithuanian parts of the corpora. As a result, more precise translation pairs have been extracted from the corpora.

Projects Supported by University Budget:

Research of Possibilities to Use the Systemized Morphological Information of Lithuanian in the Search Systems. Dr. A. Samuilis. 2012–2015.

The possibilities to use the systemized morphological information of Lithuanian in the open source search systems have been examined in 2014. The open source search system platforms Lucene, zettair, sphinx and Xapian have been analyzed. The possibilities to Lithuanize the Lucene platform have been thoroughly examined.

DIVISION OF BIOMEDICAL TECHNOLOGIES

10 Saulėtekio, LT-10223 Vilnius
Tel. 236 6085
E-mail:

Head – Prof. Habil. Dr. Živilė Lukšienė

STAFF

Shief research fellow: Prof. Habil. Dr. Ž. Lukšienė.
Senior research fellow: Assoc. Prof. Dr. A. Vaitkuvienė.
Research fellows: K. Aponienė, I. Buchovec.
Doctoral students: D. Varanius, V. Gėgžna.

RESEARCH INTERESTS

Photonanotechnologies for control of pathogenic and harmful microorganisms in biomedicine and agro-food sector
Biomedical optics: fundamental, applications, clinical investigation.
New materials in optical medicine, photodynamic therapy, photodiagnostics
Imaging and spectroscopy of bio-medical, biological objects: obstetrics, gynecology, reproduction, oncology, neurosurgery, immunology, biomaterials.

RESEARCH PROJECTS CARRIED OUT IN 2014

Projects Supported by University Budget

Optical Investigation of Biomedical Materials. Assoc. Prof. Dr. A. Vaitkuvienė. 2012–2015.

Development of Modern Antimicrobial Technologies. Prof. Habil. Dr. Z. Lukšienė. 2012–2016.

Two innovative approaches to control pathogenic and harmful microorganisms on different surfaces are in our focus: photosensitization and high power pulsed light. Obtained data indicate differential susceptibility of Gram(+) and Gram(-) bacteria to photosensitization. New experimental protocols are suggested to obtain effective and uniform inactivation of all pathogens.

National Research Projects

Research Council of Lithuania.Innovative Antimicrobial Technologies for Safety and Quality of Strawberries and Raspberries. Prof. Habil. Dr. Z. Luksiene. 2012–2015.

According to FAOSTAT data, Lithuania is included in the list of the 20 best raspberry producers. Strawberry production and consumption is at the same level. Even Botrytis cinerea increases the postharvest losses to 15–50 % and costs several billions dollars per year (Shtienberg, 2007). Due to the fact that postharvest fungicides are forbidden in EC, novel effective and ecologically friendly technologies to control microbial contamination of perishable berries are highly needed. Running this project new systemic knowledge will be obtained on the possibility to control harmful and pathogenic microorganisms and to prolong shelf-life of perishable berries without any negative impact on their nutritional quality and organoleptic properties. Susceptibility of main food pathogens and harmful micromycetes to photoactivated chlorophyllin and ZnO in vitro are evaluated, paralelly investigating mechanism of action of these agents.

MAIN R&D&I (RESEARCH, DEVELOPMENT AND INNOVATION) PARTNERS

Lund University, Medical Laser Centre (Sweden)
Uniform Service University of Health Science, Dept. Anatomy, Physiology and Genetics, Bethesda (USA)
Lithuanian companies: Integrated Optics, Standa, Lasercom, Patologijos Diagnostika (Lithuania).

OTHER SCIENTIFIC ACTIVITIES

Prof. Habil. Dr. Ž. Lukšienė -

  • member of management committee of COST FA1104 action;
  • Honorable adjunct professor of Queensland University (Austalia).

Assoc. Prof. Dr. A. Vaitkuvienė -

DEPARTMENT OF NEW MATERIALS RESEARCH AND MEASUREMENT TECHNOLOGY

9-III Saulėtekio, LT-10222 Vilnius
Tel.: 236 6082, 268 7015, fax 236 6003
E-mail:

Head – Prof. Habil. Dr. Eugenijus Gaubas

STAFF

Chief researchers: Prof. Habil. Dr. E. Gaubas, Prof. Habil. Dr. J. V. Vaitkus (part-time), Prof. Habil. Dr. V. Kažukauskas (part-time).
Senior research fellows: Assoc. Prof. Dr. S. Tamošiūnas (part-time), Assoc. Prof. Dr. J. Storasta (part-time).
Research fellows: Dr. A. Mekys (part-time), Dr. R. Pūras, Dr. E. Žąsinas (part-time), Dr. T. Čeponis
Junior research fellows: J. Pavlov, A. Tekorius, V. Rumbauskas
Doctoral students: A. Tekorius, V. Rumbauskas, J. Pavlov, D. Meškauskaitė.
Engineers: D. Meškauskaitė, A. Jasiūnas, G. Mockevičius (all part-time).
Trainees: D. Jotauta.

RESEARCH INTERESTS

Investigation of native and ionizing radiation induced defects and micro-inhomogeneities in semiconductor materials and device structures
Carrier transport phenomena in organic materials and solar cell structures
Development of measurement technologies and instrumentation for the in situ characterization of material and device structures under heavy irradiations by hadrons
Development of measurement techniques for comprehensive characterization of photo-sensors, particle detectors and solar-cells
Spectroscopy of deep levels in wide-gap semiconductors as GaN and different technology diamond
Dosimetry of large fluence irradiations
Wide–gap material scintillators for detection and dosimetry of hadron irradiations.

RESEARCH PROJECTS CARRIED OUT IN 2014

Projects Supported by University Budget

Investigation of Clusters in the Bulk and on the Surface in Semiconductors. Prof. Habil. Dr. J. V. Vaitkus. 2010–2014.

Project is implemented by investigation of magnetoresistance effect in Si structures and by analysis of temperature dependent the magnetoresistance mobility. The role of defect clusters is also unveiled by the comprehensive study of recombination characteristics within epitaxial and MCz Si structures. The wide range investigations of spectra of the thermal and photo- ionization of deep traps have been combined with DLTS and time-resolved photoluminescence spectroscopy in MOCVD GaN structures. 

Development of Photo- and High Energy Radiation Detectors. Prof. Habil. Dr. E. Gaubas. 2014–2015.

Project is addressed to investigation of the detection regimes by combining the electrical and scintillation characteristics of wide –gap semiconducting materials such as GaN, CdS, ZnSe and synthetic diamond. The in situ and ex-situ changes of the radiation induced photoconductivity and luminescence spectra have been examined. The pulsed photo-ionization spectroscopy technique using microwave probes have been developed for inspection of deep levels ascribed to technological and radiation induced defects in wide-gap semiconductors. 

Development of Techniques for Formation and Characterization of Cluster Defects in Wide-gap Semiconductor Materials. Prof. Habil. Dr. E. Gaubas. 2014–2015.

Project is addressed to research of the creation regimes and identification of nanocluster defects arranged through aggregation of large density of vacancy and interstitial defects.  Formation of deep levels attributed to multivacancy structures in Si and GaN have been modelled. Tentative investigations of DLTS spectra have been performed. These results were correlated with photo-ionization spectra in the same materials and samples.

National Research Projects

Projects Supported by the Lithuanian Science Council
Lithuanian Science Council (LSC) project (No. MIP-060/2013) In situ and ex situ evolution of radiation defects in diamond and GaN materials. Prof. Habil. Dr. E. Gaubas. 2013–2015.

The project is addressed to scientific and technological research by developing techniques for study of the radiation defects evolution during and after high energy irradiation in the wide band-gap materials.

Main publications:

Gaubas, E., Ceponis, T., Pavlov, J., Baskevicius, A. 2014. Profiling of the injected charge drift current transients by cross-sectional scanning technique. Journal of Applied Physics, vol. 115, 054509.

Gaubas, E., Ceponis, T., Jasiunas, A., Kovalevskij, V., Meskauskaite, D., Pavlov, J., Remeikis, V., Tekorius, A., Vaitkus, J. 2014. Correlative analysis of the in situ changes of carrier decay and proton induced photoluminescence characteristics in chemical vapour deposition grown GaN. Applied Physics Letters, vol. 104, 062104.

Gaubas, E., Ceponis, T., Jasiunas, A., Kalendra, V., Pavlov, J., Kazuchits, N., Naumchik, E., Rusetsky, M. 2014. Lateral scan profiles of the recombination parameters correlated with distribution of grown-in impurities in HPHT diamond. Diamond & Related Materials, vol. 47, 15–26.

Operational Programme for Human Resources Development for 2001–2013  Strengthening Capacities of Researchers project (No. VP1-3.1-SMM-07-K-03-010) Radiation-induced Nanoclusters in Si and GaN. Prof. Habil. Dr. J . V. Vaitkus. 2013–2015.

This research is addressed to analysis of the evolution and transformation of nanoclusters, radiation produced in crystalline Si and GaN structures.

Main publications:

Vysniauskas, J., Gaubas, E. 2014. Simulation of GaN Schottky diode type particle detectors using TCAD. Proceedings of the 5th international conference Radiation Interaction with Materials: Fundamentals and Applications -2014. Technologija, Kaunas, p. 282–285. 

Gaubas, E., Ceponis, T., Pavlov, J., Jasiunas, A., Jonkus, V., Meskauskaite, D., Tekorius, A. 2014. Carrier decay and luminescence characteristics in hadron irradiated MOCVD GaN. JINST (Journ. of Instrum.), vol. 9, C12044.

Framework of the Lithuanian–French Programme “Gilibert” for Bilateral Cooperation in the Fields of Culture, Education, Science, Technology and Technique. Project Development and Investigations of Functional Polymer and Nanocrystal Composite Materials for Optoelectrical Applications. (No. TAP-LZ 01/2013). Prof. Habil. Dr. V. Kažukauskas. 2013–2014.

Main publications:

Koerner, Ch., Hein, M.P., Sakavičius, A., Janonis, V., Kažukauskas, V., Fitzner, R., Baeuerle, P., Leo, K., Riede, M. 2014. Correlation between temperature activation of charge carrier generation efficiency and whole mobility in small molecule donor materials. Chem. Phys. Chem., vol. 15 (6), 1049–1055.

Cooperation programme in science and technology of Lithuania and Ukraine. Project Synthesis and Investigation of New Chalcogen and Halogen Materials for Micro-, Nano- and Optoelectronics. (No. TAP-LU 02/2014). Prof. Habil. Dr. V. Kažukauskas. 2014–2015. 

Main publications:

Novosad, O.V., Bozhko, V.V., Davydyuk, H.E., Parasyuk, O.V., Gerasymyk, O.R., Vainorius, N., Sakavičius, A., Janonis, V., Kažukauskas, V. 2014. Influence of cation-vacansy imperfection on the electrical and photoelectric properties of Cu1−xZnxInS2 alloy. Semiconductors, vol. 48 (3), 286–291.

Bozhko, V.V., Novosad, O.V., Parasyuk, O.V., Vainorius, N., Sakavičius, A., Janonis, V., Kažukauskas, V., Chichurin, A.V. 2014. Specific features of the low-temperature electrical conductivity and photoconductivity of CuInSe2−ZnIn2Se4 solid solutions. Semiconductors, vol. 48 (6), 747–752.

Bozhko, V.V., Novosad, A.V., Davidyuk, G.E., Kozer, V.R., Parasyuk, O.V., Vainorius, N., Sakavičius, A., Janonis, V., Kažukauskas, V. 2014. Solid-state solutions of copper indium disulfide and zinc indium tetrasulfide: Growth, crystallography and opto-electronic properties. Mat. Sci. Semicond. Proc., vol 24, 231–236.

European COST Action MP1307 Stable Next-Generation Photovoltaics: Unraveling degradation mechanisms of Organic Solar Cells by complementary characterization techniques (StableNextSol). Prof. Habil. Dr. V. Kažukauskas. 2014–2018.

Main publications:

Pranaitis, M., Sakavičius, A., Kažukauskas, V. 2014. Application of the thermally stimulated current method to prove the Gaussian distribution of the charge transport and trapping states in the band gap of MDMO-PPV, depending on the synthesis route. Optical Materials, vol. 36 (8), 1424–1429.

Kažukauskas, V., Sakavičius, A., Couderc E., Janonis, V., Reiss, P., Djurado, D., Faure-Vincent, J. 2014. Electrical measurements on P3HT:CdSe blends for photovoltaic applications. Molecular Crystals and Liquid Crystals, vol. 604, iss. 1, 174–183.

Projects Supported by the Lithuanian Agency of Science, Innovations and Technology

FP7 project AIDA Advanced European Infrastructures for Detectors at Accelerators (No. 2014.08.26 Nr. 31V-57 / LLS-230000-1965). Prof. Habil. Dr. E. Gaubas.

WP 8.3.2 of the FP7 AIDA project is addressed to the design, fabrication and testing of the improved instrument for radiation monitoring and comprehensive research of the irradiated materials, based on the measurements of carrier lifetime implemented by microwave response registration. In November 2014 the improved version of the VUTEG-5-AIDA instrument returned to CERN and was installed in the laboratory of the irradiation facility. The instrument is now fully operational and ready to take data. A user guide for manipulations with VUTEG-5-AIDA has been prepared. There the basics for the evaluation of the carrier recombination and trapping lifetimes, of the surface recombination velocity, of the density of technological and radiation defects are presented. CERN personnel have been acquainted with primary instructions in usage of the instrument VUTEG-5-AIDA.

Main publications:

Tekorius, A., Gaubas, E., Ceponis, T., Pavlov, J., Vaitkus, J., Glaser, M., Moll, M. 2014. Fluence and anneal dependent variations of recombination parameters in Si irradiated by 26 GeV protons. Proceedings of the 5th international conference Radiation Interaction with Materials: Fundamentals and Applications -2014. Technologija, 432–435.

Projects Supported by the Lithuanian Academy of Science

Project (No. CERN-CEC) Investigation of Radiation Defects in Si Structures and their Application for the Monitoring of Ionizing Radiation.   Prof. Habil. Dr.  J. V. Vaitkus. 2014.

Project is devoted to research of the magnetogalvanic effects and carrier transport characteristics in the irradiated Si structures.

Main publications:

Mekys, A., Rumbauskas, V., Storasta, J., Makarenko, L., Vaitkus, J. 2014. Defect analysis in fast electron irradiated silicon by Hall and magnetoresistivity means. Nucl. Instr. Meth. Phys Res. B-338.

Mekys, A., Rumbauskas, V., Storasta, J., Makarenko, L., Vaitkus, J. 2014. Hall effect and magnetoresistance investigation in fast electron irradiated silicon. Lithuanian Journal of Physics, vol. 54, No. 2, 94–98.
Zasinas, E., Vaitkus, J. 2014. The non-exponential and non-Auger-like time dependence of non-equilibrium

free carrier concentration decay decay in a semiconductor with two deep levels at high injection rates. Physica B: Condensed Matter, vol. 432, 45–52.

INTERNATIONAL SCIENCE PROGRAMMES, PROJECTS AND CONTRACTS

FP7 project AIDA Advanced European Infrastructures for Detectors at Accelerators. Prof. Habil. Dr. J. V. Vaitkus. 2013–2015.

VU WP Project is addressed to rapid dosimetry monitoring of the environment of accelerators.

Main publications:

Tekorius, A., Gaubas, E., Ceponis,  T., Pavlov, J., Vaitkus, J., Glaser, M., Moll, M. 2014. Fluence and anneal dependent variations of recombination parameters in Si irradiated by 26 GeV protons. Proceedings of the 5th international conference Radiation Interaction with Materials: Fundamentals and Applications -2014. Technologija, 432–435.

Research project funded from the European Community’s Social Foundation Synthesis and Characterization of New Materials for Semiconductor- and Nano-Technologies by Means of Continuous and Ultrafast Spectroscopic Methods (Grant Agreement No. VP1-3.1-ŠMM-08-K-01-004/KS-120000-1756, the main project leader – Prof. Habil. Dr. V. Šablinskas). 2012–2014.

The project WP for the department (implemented by Prof. E. Gaubas and Dr. T. Ceponis) is addressed to spectroscopy of wide-bandgap materials by advanced measurement techniques.

CERN RD39 Collaboration program Cryogenic Tracking Detectors.Dr. J.Harkonen (Finland) and Dr. Zh. Li (USA).
Vilnius group projectFree Carrier Lifetime in Irradiated Si. Prof. Habil. Dr.  J. V. Vaitkus, Prof. Habil. Dr. E.  Gaubas. 2002–2015.

Project is devoted to the study of the radiation hardness of Si material and device structures by microwave probed photoconductivity transients, pulsed capacitance and carrier drift induced current measurements. 

CERN RD50 Collaboration program RadiationHard Semiconductor Devices for Very High Luminosity Colliders. Dr. M. Moll. Contribution to the program Materials Characterization (Prof. M.Bruzzi) 2002–2015 and Defect Engineering (WODEAN project) (Prof. G. Lindstrom).

Analysis of radiation defect parameters by means of extrinsic photoconductivity spectra analysis, by lifetime dependence on the hadron irradiation fluences.  Combined investigation of current, capacitance and photoconductivity transients in heavily irradiated material and detector structures.

MAIN R&D&I (RESEARCH, DEVELOPMENT AND INNOVATION) PARTNERS

Collaboration project according to a bilateral agreement between Vilnius University and Centre of Physical and Technological Sciences, Lithuania. Prof. Habil. Dr. E.Gaubas. 2012–2014.
Development of radiation technologies.
National industry partners: ELMIKA, Ltd., Vilniaus Ventos Puslaidininkiai-VVP, Ltd , STANDA, Ltd (Lithuania). Prof. Habil. Dr. E.Gaubas.  Development of device improvement technologies and techniques for technological control of materials.
International cooperation partners: a net of partners is created by CERN RD39 and RD50 collaboration programmes those include more than 50 institutions in 19 countries. Coordinator Prof. Habil. Dr. J.V.Vaitkus.
Santa Cruz Institute for Particle Physics, University of California Santa Cruz, USA, Prof. Habil. Dr. E.Gaubas. Research and development of the surface passivation technology for SLIM particle detectors.

OTHER SCIENTIFIC ACTIVITIES

Prof. Habil. Dr. J. V. Vaitkus –

  • chairman of the Division of Physics of the Lithuanian Academy of Sciences;
  • Fellow of the Institute of Physics (UK);
  • President of the Lithuanian Physical Society;
  • vice-chairman of CERN RD50 collaboration board,
  • member of CERN RD39 collaboration board;
  • deputy-editor of the Lithuanian Journal of Physics, and member of the international advisory board;
  • member of the Council of European Physical Society and general assembly of  the IUPAP;
  • editorial board member of the journal Material Science (Medžiagotyra)
  • international advisory board member of the journal Physical Surface Engineering (Ukraine);
  • steering committee member of ROC-Lithuania-Latvia Foundation;
  • advisor to the Committee of Professional Qualification, European Physical Society;

Prof. Habil. Dr. V. Kažukauskas –

  • member of the project selection committee of Georgian Shota Rustaveli National Science Foundation (SRNSF);
  • President of Lithuanian DAAD Club (DAAD – German Academic Exchange Service).

Assoc. Prof. Dr. S. Tamošiūnas –

  • director of the advanced scholars school Fizikos Olimpas.

DEPARTMENT OF SEMICONDUCTOR OPTOELECTRONICS

9-III Saulėtekio, LT-10219 Vilnius
Tel. 236 6036, fax 236 6037
E-mail:

Head - Prof. Habil. Dr. Artūras Žukauskas

DIVISION OF OPTICAL DIAGNOSTICS

Head – Prof. Habil. Dr. Kęstutis Jarašiūnas
E-mail:

DIVISION OF LUMINESCENCE 

Head – Dr. Karolis Kazlauskas
E-mail:

DIVISION OF LIGHTING AND ELECTRONICS SYSTEMS

Head – Dr. Pranciškus Vitta
E-mail:

STAFF

Chief research fellows: Prof. Habil. Dr. K. Jarašiūnas, Prof. Habil. Dr. S. A. Juršėnas, Prof. Habil. Dr. G. Tamulaitis, Prof. Habil. Dr. E. Kuokštis (all part-time), Prof. Habil. Dr. A. Žukauskas..
Senior research fellows: Dr. R. Aleksiejūnas (part-time), Dr. K. Kazlauskas, Dr. T. Malinauskas, Dr. J. Mickevicius (part-time), Dr. P. Vitta.
Research fellows: Dr. D. Dobrovolskas (part-time), Dr. V. Gudelis (part-time), Dr. G. Liaugaudas (part-time), Dr. S. Miasojedovas, Dr. S. Nargelas, (part-time), Dr. A. Novičkovas, Dr. P. Ščajev.
Young research fellows: J. Jurkevičius, S. Raišys, T. Serevičius, L. Skardžiūtė, D. Ševčenko, A. Tuzikas (all part-time).
Senior engineers: L.Bastienė, O. Kravcov (both part-time).
Engineer staff: J. Aleknavičius, P. Baronas, L. Dabašinskas, P. Eidikas, R. Komskis, G. Kreiza, M. Mackoit, A. Petrulis, J. Trimailovas, A. Vaitkevičius, A. Zabiliūtė, (all part-time), D. Meškauskas.
Doctoral students: J. Jurkevičius, R. Komskis, G. Kreiza, D. Meškauskas, A. Petrulis, S. Raišys. L. Skardžiūtė, T. Serevičius, D. Ševčenko, A. Tuzikas, A. Zabiliūtė.
Post-docs: S. Nargelas

RESEARCH INTERESTS

Nonequilibrium carrier relaxation, transport and related photoelectrical phenomena in highly excited semiconductors and their nanostructures
Development of laser-based spectroscopic techniques with temporal, spectral, and spatial resolution for characterization of novel semiconductor materials for optoelectronics
Nondestructive characterization of wide band gap semiconductor materials
Optical nonlinearities in semiconductors
Development of organic optoelectronics materials and technologies
Photophysical properties of organic electronics materials
Formation of OLED structures and organic sensor systems
Characterization, optimization and applications of light-emitting diodes and their systems
Lighting systems with advanced colour rendition control for general and niche lighting
Lighting systems for vegetable growth with improved nutritional quality
Intelligent solid-state lighting systems for outdoor lighting

RESEARCH PROJECTS CARRIED OUT IN 2014

Projects Supported by University Budget

Development of Materials, Structures, and Devices for Semiconductor Optoelectronics. Prof. Habil. Dr. K. Jarašiūnas, Prof. Habil. Dr. S. A. Juršėnas, Dr. R. Tomašiūnas. 2011–2014.

Research facilities and techniques were applied for the characterization of differently doped SiC and diamond layers. Commentary optical techniques were applied for the study of carrier dynamics with variable temporal and spatial resolution to determine technology-related materials.

Main publications:

Liaugaudas, G., Dargis, D., Kwasnicki, P., Arvinte, R., Zielinski, M., Jarašiūnas, K. 2014. Determination of carrier lifetime and diffusion length in Al-doped 4H-SiC epilayers by time-resolved optical techniques. J. Phys. D: Appl. Phys., vol. 48, 025103.

Characterization of Advanced Light-emitting Diodes for Solid State Lighting and Measurement Technologies. Prof. Habil. Dr. A. Žukauskas. 2008–2014.

New far-red phosphors for phosphor converted light-emitting diodes that meet the photomorphogenetic needs of plants were characterized. Colour rendition metrics for solid-state light sources were revealed.

Main publications:

Zabiliūtė, A., Butkutė, S., Žukauskas, A., Vitta, P., Kareiva, A. 2014. Sol-gel synthesized far-red Cr-doped garnet phosphors for phosphor-conversion LEDs that meet the photomorphogenetic needs of plants. Appl. Opt., vol. 53, 907–914.

Žukauskas, A. Solid-state lighting: colour rendition metrics and beyond.  Light Sources 2014. 14th Int. Symp. on Science and Technology of Lighting. LS14 Conference Program (Como, Italy, June 22–27, 2014), IP123, invited paper.

National Research Projects

European Social Fund. Nonlinear ex-situ Optical Diagnostics and Optimization of Nitride Heterosctructures for Optoelectronics (OPTO) (Global Grant No. VP1-3.1-ŠMM-07-K-02-006). Prof. Habil. Dr. K. Jarašiūnas. 2012–2015.

Using the pico- and femtosecond spectroscopic techniques, InGaN/GaN quantum well structures and Al-rich AlGaN heterostructures of different technology were investigated. The study of carrier dynamics provided deeper information on carrier generation-recombination rates as well diffusivity, their dependence on excitation and impact on saturation of internal quantum efficiency.   Set of LED-structures with varying doping, interlayer structure, growth regimes was grown to reach the optimized conditions for device-structure growth.

Main publications:

Aleksiejūnas, R., Gelžinytė, K., Nargelas, S., Jarašiūnas, K., Vengris, M., Armour, E.A., Byrnes, D.P., Arif, R.A., Lee, S.M., Papasouliotis, G.D. 2014. Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures. Appl. Phys. Lett., vol. 104, 022114.

A. Kadys, T. Malinauskas, M. Dmukauskas, I. Reklaitis, K. Nomeika, V. Gudelis, R. Aleksiejūnas, P. Ščajev, S. Nargelas, S. Miasojedovas, K. Jarašiūnas, “Photoliuminescence features and carrier dynamics in InGaN heterostructures with wide stair-case interlayers and differently-shaped quantum wells,” Lith. J. Phys. 54, 187–198 (2014).

Jarašiūnas, K. 2014. Monitoring of carrier dynamics in semiconductor heterostructures by nonlinear optical and holographic techniques. Proceedings of the 12th int. conf. on Expert Evaluation of Semiconductor Materials and Technologies (EXMATEC) (Delphi, Greece, June 10–15, 2014), invited paper.

European Social Fund. Control of the Photophysical Properties of Multifunctional Molecular Systems. (Global Grant No. VP1-3.1-ŠMM-07-K-02-012). Prof. Habil. Dr. S .A. Juršėnas. 2012–2015.

The research provided physical insight on the control of multifunctional organic electronic material properties, increased the capabilities of Lithuanian scientists and technologists in the field of organic optoelectronics and opened the way for wider applications of Lithuania-made multifunctional materials.

Main publications:

Raisys, S., Kazlauskas, K., Daskeviciene, M., Malinauskas, T., Getautis, V., Jursenas, S. 2014. Exciton diffusion enhancement in triphenylamines via incorporation of phenylethenyl sidearms. J Mater. Chem., vol. C 2, 4792–4798.

Kazlauskas, K., Kreiza, G., Arbačiauskienė, E., Bieliauskas, A., Getautis, V., Šačkus, A., Juršėnas, S. 2014. Morphology and emission tuning in fluorescent nanoparticles based on phenylenediacetonitrile. J. Phys. Chem., vol. C 118, 25261–25271.

European Social Fund. Improvement of Light Emission in III-nitrides by Boron Introduction to Increase Lattice Matching. (Global grant No. VP1-3.1-ŠMM-07-K-02-014). Prof. Habil. Dr. G.Tamulaitis. 2012–2015.

The prevailing efficiency droop in AlGaN epilayers with strong carrier localization and high density of nonradiative recombination centres has been shown to be enhanced by nonradiative recombination due to carrier delocalization. Laser pulses with duration much shorter than the effective carrier lifetime were found to cause permanent photoluminescence quenching in AlGaN epilayers and structures at pulse energies about an order of magnitude lower than those causing the surface to melt.

Main publications:

Mickevičius, J., Jurkevičius, J., Tamulaitis, G., Shur, M.S., Shatalov, M., Yang, J., Gaska, R. 2014. Influence of carrier localization on high-carrier density effects in AlGaN quantum wells. Opt. Express, vol. 22, A491–A497.
Tamulaitis, G., Mickevičius, J., Jurkevičius, J., Shur, M.S., Shatalov, M., Yang, J., Gaska, R. 2014.

Photoluminescence efficiency in AlGaN quantumwells. Physica, vol. B 453, 40–42.

Malinauskas, T., Kadys, A., Stanionytė, S., Badokas, K., Mickevičius, J., Jurkevičius, J., Dobrovolskas, D., Tamulaitis, G. 2014. Growth of BGaN epitaxial layers using close coupled showerhead MOCVD. Phys. Status Solidi, vol. B, 1–4; doi: 10.1002/pssb.201451560.

European Social Fund. Novel Bifluorene Compounds with Flexible Structure for Optoelectronic Industry (BIFLUORENAS). (Grant No. VP1-3.1-ŠMM-10-V-02-023) Dr. K. Kazlauskas. 2013–2015.

A series of benzofluorene-cored compounds with singly-bonded peripheral aromatic and branched alkyl moieties were synthesized and investigated as potential lasing materials. The suitability of the compounds as lasing materials was assessed by quantifying concentration quenching of fluorescence quantum yield, by estimating pump thresholds of amplified spontaneous emission (ASE) as well as evaluating excited state lifetime and carrier drift mobility. Some of the compounds were shown to express very low thresholds of ASE (<1kW/cm2).

Research Council of Lithuania. Mesopic Solid-state Light Sources (MesoLED) (No. ATE-01/2013). Prof. Habil. Dr. A. Žukauskas. 2012–2014.

Dichromatic phosphor-converted light-emitting diodes with low circadian action were proposed. A concept of a smart solid-state source of light with tuneable circadian action has been developed. A “firelight” cluster of light-emitting diodes was optimized for outdoor lighting under mesopic conditions. A smart tetrachromatic solid-state light engine with tuneable correlated colour temperature and high-fidelity colour rendition was developed and applied for finding the most pleasing lighting conditions in outdoor environments.

Main publications:

Zabiliūtė, A., Vaicekauskas, R., Vitta, P., Žukauskas, A. 2014. Phosphor converted LEDs with low circadian action for outdoor lighting. Opt. Lett., vol. 39, 563–566.

Žukauskas, A., Vaicekauskas, R., Tuzikas, A., Petrulis, A., Stanikūnas, R., Švegžda, A., Eidikas, P., Vitta, P. 2014. Firelight LED source: toward a balanced approach to the performance of solid-state lighting for outdoor environments. IEEE Photonics J. vol. 6, 8200316.

Viliūnas, V., Vaitkevičius, H., Stanikūnas, R., Vitta, P., Bliumas, R., Auškalnytė, A., Tuzikas, A., Petrulis, A., Dabašinskas, L., Žukauskas, A. 2014. Subjective evaluation of luminance distribution for intelligent outdoor lighting. Lighting Res. Technol., vol. 46, 421–433.

Research Council of Lithuania. Enhancement of Light Emission Efficiency in Wide-band-gap Nitride Semiconductors (LIUMIDI). (No. MIP-054/2012). Dr. J. Mickevičius. 2012–2014.

During the last year of the project, the investigations have been focused on: experimental studies of luminescence efficiency dependence on photoexcitation in AlGaN epilayers and quantum wells; studies of relation between carrier dynamics and localization in high-Al-content AlGaN epilayers; technological studies of AlGaN epilayer and quantum well growth using VU MOCVD reactor; and numerical studies of carrier generation, migration and recombination processes.

Research Council of Lithuania. Plasmonic AlGaN/GaN Terahertz Emitters (MIP-064/2012). Dr. R.Aleksiejūnas. 2012–2014 (in cooperation with the Center for Physical Sciences and Technology).

We have optimized the deposition conditions of Schottky and Ohmic contacts on AlGaN. We have produced HEMT devices with various gate designs, including the grating-shaped contacts with 150–200 nm period. We made a THz emitter over 2x2 mm2 area of a HEMT transistor with grating type gate electrode, emitting 6 mW power into 0.62 sr solid angle within 0.3–5 THz spectral range, just as it was stated in the Project goal. We managed to carry out all the required technological steps in Lithuania. For comparison, we made HEMT and Schottky diodes on the AlGaN/GaN substrates provided by other growers. We showed that the parameters of “Lithuanian” devices were good enough, which should encourage the development of other more complex devices based on AlGaN/GaN technology.

Research Council of Lithuania. Conserving and Smart Lighting Technology for Art Display (TIMKAT). (No. MIP-098/2012). Dr. R.Vaicekauskas (Department of Computer Science, Vilnius University). 2012–2014.

A concept of a solid-state lighting engine for artwork-specific illumination with controlled photochemical safety was introduced and implemented. The device was demonstrated at Lithuanian museums of art.

Main publications:

Tuzikas, A., Žukauskas, A., Vaicekauskas, R., Petrulis, A., Vitta, P., Shur, M. 2014. Artwork visualization using a solid-state lighting engine with controlled photochemical safety. Opt. Express, vol. 22, 16802–16818.

Žukauskas, A., Vaicekauskas, R., Vitta, P., Tuzikas, A., Shur, M. 2014. Polychromatic solid-state light sources for the control of colour saturation of illuminated surfaces. Publ. No EP2732206 (A1), US2014167646 (A1).

Žukauskas, A., Vaicekauskas, R., Vitta, P., Tuzikas, A., Zabiliūtė, A., Petrulis, A. 2014. Solid-state sources of light for preferential colour rendition. PCT Publ. No WO2014133374.

International Research Projects

7th Framework Programme. Marie Curie Initial Training Network Contract Training Network on Functional Interfaces for Silicon Carbide (NetFISiC) (No. PITN-GA-2010-264613). Prof. Habil. Dr. K.Jarašiūnas. 2011–2014.

In 2014, the studies were focused on evaluation of SiC bulk and surface properties, determination of p-doped layer parameters as carrier lifetime and mobility, discrimination of free carrier and trapped carrier features by optical pump-probe techniques.

Main publications:

Liaugaudas, G., Ščajev, P., Jarašiūnas, K. 2014. Carrier dynamics and photoelectrical  parameters in highly compensated sublimation grown 3C-SiC layers studied by time-resolved nonlinear optical  techniques. Semicond. Sci. Technol., vol. 29, 015004.

7th Framework Programme. Coordination and Support Action. Accelerate SSL Innovation for Europe (SSL-erate) (No. 619249). Representative of Vilnius University Prof. Habil. Dr. A. Žukauskas. 2013–2016.

The preparation of the introductory map of green business opportunities for solid-state lighting (SSL) was contributed. The local industry and other green business stakeholders were contacted to discuss the SSL deployment in terms of sustainability and meaningfulness. The preparation of the introductory and situation analysis reports on lighting for health and well-being in Smart Cities was contributed. Presentation at a workshop for Lithuanian lighting designers to support raising awareness and implementation was given.

Contractual Research

Kaunas University of Technology. Investigation of Optical Properties of Dyes and Organic Multifunctional Molecules. Prof. Habil. Dr. S. A. Juršėnas. 2014–2015.

Kaunas University of Technology. New Structures of Organic Semiconductors for New Generation of Optoelectronic Devices. Prof. Habil. Dr. S. A. Juršėnas. 2014–2015.

Sensor Electronic Technology, Inc. (USA). Addendum to Cooperative Agreement. Prof. Habil. Dr. A. Žukauskas.

Žukauskas, A., Vaicekauskas, R., Ivanauskas, F., Vaitkevičius, H., Shur, M.S. 2014. Multiwavelength solid-state lamps with an enhanced number of rendered colours. U.S. Patent No 8,771,029.

MAIN R&D&I (RESEARCH, DEVELOPMENT AND INNOVATION) PARTNERS

Aixtron AG, Germany
Centre for Physical Sciences and Technology (Lithuania)
Durham University (United Kingdom).
Rensselaer Polytechnic Institute (Troy NY, USA)
Sensor Electronic Technology Inc. (USA)

OTHER SCIENTIFIC ACTIVITIES

Prof. Habil. Dr. K. Jarašiūnas –

  • honourable member of Baltic-American Freedom Foundation expert committee.

Prof. Habil. Dr. E. Kuokštis - 

  • member of  the Research Council of Lithuania (Committee of Natural and Technical Sciences) (http://ww.lmt.lt)

Dr. J . Mickevičius -

  • Young-Researcher Scholarship of the Lithuanian Academy of Sciences.

Dr. P. Ščajev -

  • Best national PhD Award in the field of natural sciences.

Prof. Habil. Dr. A. Žukauskas-

  • editorial board member of the Journal of Solid State Lighting (http://www.journalofsolidstatelighting.com/

LIQUID CRYSTALS LABORATORY

24 Naugarduko, LT-03225 Vilnius
Tel. 213 5553, fax 216 3417
E-mail:

Head – Assoc. Prof. Dr. Povilas Adomėnas

STAFF

Senior research fellows: Doc. Dr. P. Adomėnas, Dr. O. Adomėnienė.
Senior engineers: A. Gleiznys.
Engineers: O. Bobrovas, S.Jevstafiev, V. Kalcas, S. Bikantienė, A. Urbaitis, V. Žvinytė,  I. Vasinavičiūtė.
Technicians: M. Pikaikinas (part-time), A. Žvikas (part-time), R. Lebionka (part-time).

RESEARCH INTERESTS

New synthetic methods for fluorene type compounds, poly-substituted anthracenes
New compounds and intermediates for OLED-technology
Efficient technologies for photovoltaic and OLED intermediates

MAIN R&D&I (RESEARCH, DEVELOPMENT AND INNOVATION) PARTNERS

JNC Corp. (Japan).
KISCO Ltd. (Japan).
Chukan Butsu Ltd. (Japan).
Cambridge Display Technology Ltd. (UK).
SYNTHON Chemicals GmbH & Co. KG (Germany).