Reactive ion etching equipment Oxford Instruments 100 RIE ICP-65

Unit: Faculty of Physics

Keywords: Reactive ion etching, Oxford Instruments, semiconductor epitaxial layers, laser interferometer

Responsible person: Dr. Ignas Reklaitis, tel.+37060034126,

Equipment is suitable for mesa structures etching in semiconductor epitaxial layers.

The system has an in-situ laser (λ = 660 nm) interferometer for etch speed control. The system is has Cl2, BCl3, O2, SF6 and Ar gas lines. The temperature of the lower electrode can be varied from -30 to 80 °C, ICP source power is 600W. Preferable size of the wafer is 2''but it is possible to etch the samples up to 8'' in diameter. Etch aspect ratio is 20:1. 

Application. Dry etching of semiconductor epi-layers.